Invention Grant
- Patent Title: Semiconductor storage device
- Patent Title (中): 半导体存储设备
-
Application No.: US13462905Application Date: 2012-05-03
-
Publication No.: US09229863B2Publication Date: 2016-01-05
- Inventor: Eiji Yoshihashi , Hirokuni Yano , Shinji Yonezawa
- Applicant: Eiji Yoshihashi , Hirokuni Yano , Shinji Yonezawa
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2009-288503 20091218
- Main IPC: G06F12/00
- IPC: G06F12/00 ; G06F12/08
Abstract:
According to the embodiments, a first storage area and a second storage area specified by a trim request is managed by a first management unit, and the second storage area specified by the trim request is managed by a second management unit. A block in which data of the first management unit are all specified by the trim request from the first or second storage areas and a block in which data of the second management unit are all specified by the trim request from the second storage area are released.
Public/Granted literature
- US20120221776A1 SEMICONDUCTOR STORAGE DEVICE Public/Granted day:2012-08-30
Information query
