Invention Grant
US09230051B2 Method of generating voltage island for 3D many-core chip multiprocessor
有权
为3D多核芯片多处理器生成电压岛的方法
- Patent Title: Method of generating voltage island for 3D many-core chip multiprocessor
- Patent Title (中): 为3D多核芯片多处理器生成电压岛的方法
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Application No.: US14579023Application Date: 2014-12-22
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Publication No.: US09230051B2Publication Date: 2016-01-05
- Inventor: Sungho Kang , Hyejeong Hong
- Applicant: Industry-Academic Cooperation Foundation, Yonsei University
- Applicant Address: KR Seoul
- Assignee: Industry-Academic Cooperation Foundation, Yonsei University
- Current Assignee: Industry-Academic Cooperation Foundation, Yonsei University
- Current Assignee Address: KR Seoul
- Agency: Carter, DeLuca, Farrell & Schmidt, LLP
- Priority: KR10-2014-0000571 20140103
- Main IPC: G06F1/26
- IPC: G06F1/26 ; G06F17/50 ; G06F1/00 ; G06F1/32
Abstract:
Provided is a method of forming a voltage island for a 3D many-core chip multiprocessor, the method including setting the priority of a voltage zone based on the heat emission characteristic of the voltage zone; and forming a voltage island by using the priority.
Public/Granted literature
- US20150193571A1 METHOD OF GENERATING VOLTAGE ISLAND FOR 3D MANY-CORE CHIP MULTIPROCESSOR Public/Granted day:2015-07-09
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