Invention Grant
- Patent Title: High-frequency VLSI interconnect and intentional inductor impedance extraction in the presence of a multi-layer conductive substrate
- Patent Title (中): 在存在多层导电衬底的情况下,高频VLSI互连和有意的电感阻抗提取
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Application No.: US14563285Application Date: 2014-12-08
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Publication No.: US09230054B2Publication Date: 2016-01-05
- Inventor: Roberto Suaya
- Applicant: Mentor Graphics Corporation
- Applicant Address: US OR Wilsonville
- Assignee: Mentor Graphics Corporation
- Current Assignee: Mentor Graphics Corporation
- Current Assignee Address: US OR Wilsonville
- Agency: Klarquist Sparkman, LLP
- Main IPC: G06F17/50
- IPC: G06F17/50 ; G06F11/22

Abstract:
Embodiments of methods, apparatus, and systems for extracting impedance for a circuit design are disclosed herein. Some of the disclosed embodiments are computationally efficient and can accurately compute the frequency-dependent impedance of VLSI interconnects and/or intentional inductors in the presence of multi-layer conductive substrates. In certain embodiments, the resulting accuracy and CPU time reduction are a result of a Green's function approach with the correct quasi-static limit, a modified discrete complex image approximation to the Green's function, and a continuous dipole expansion to evaluate the magnetic vector potential at the distances relevant to VLSI interconnects and intentional inductors.
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