Invention Grant
US09230609B2 Memory bandwidth aggregation using simultaneous access of stacked semiconductor memory die
有权
使用堆叠半导体存储器芯片的同时访问的存储器带宽聚合
- Patent Title: Memory bandwidth aggregation using simultaneous access of stacked semiconductor memory die
- Patent Title (中): 使用堆叠半导体存储器芯片的同时访问的存储器带宽聚合
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Application No.: US13908973Application Date: 2013-06-03
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Publication No.: US09230609B2Publication Date: 2016-01-05
- Inventor: Yohan Frans
- Applicant: Rambus Inc.
- Applicant Address: US CA Sunnyvale
- Assignee: Rambus Inc.
- Current Assignee: Rambus Inc.
- Current Assignee Address: US CA Sunnyvale
- Agency: Peninsula Patent Group
- Agent Lance Kreisman
- Main IPC: G11C5/02
- IPC: G11C5/02 ; G11C5/06 ; H01L25/065

Abstract:
A packaged semiconductor device includes a data pin, a first memory die, and a second memory die stacked with the first memory die. The first memory die includes a first data interface coupled to the data pin and a first memory core having a plurality of banks. The second memory die includes a second memory core having a plurality of banks. A respective bank of the first memory core and a respective bank of the second memory core perform parallel row access operations in response to a first command signal and parallel column access operations in response to a second command signal. The first data interface of the first die provides aggregated data from the parallel column access operations in the first and second die to the data pin.
Public/Granted literature
- US20130336039A1 MEMORY BANDWIDTH AGGREGATION USING SIMULTANEOUS ACCESS OF STACKED SEMICONDUCTOR MEMORY DIE Public/Granted day:2013-12-19
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