Invention Grant
US09230631B2 Differential current sensing scheme for magnetic random access memory
有权
磁性随机存取存储器的差分电流检测方案
- Patent Title: Differential current sensing scheme for magnetic random access memory
- Patent Title (中): 磁性随机存取存储器的差分电流检测方案
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Application No.: US14611572Application Date: 2015-02-02
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Publication No.: US09230631B2Publication Date: 2016-01-05
- Inventor: Sergiy Romanovskyy
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT, P.C.
- Agent Anthony King
- Main IPC: G11C7/02
- IPC: G11C7/02 ; G11C11/16 ; G11C7/06 ; G11C11/4091 ; G11C11/22 ; G11C7/14

Abstract:
A circuit includes a cell segment, first and second reference cells, and a current sense amplifier. The first and second reference cells are configured to store opposite logic values, respectively. The current sense amplifier is configured with a first node and a second node for currents therethrough to be compared with each other. The current sense amplifier includes a multiplexer configured to couple the first reference cell or the second reference cell to the first node of the current sense amplifier, and couple the second reference cell or the first reference cell to the second node of the current sense amplifier in a first mode, and couple a cell of the cell segment to the first node of the current sense amplifier, and couple the first and second reference cells to the second node of the current sense amplifier in a second mode.
Public/Granted literature
- US20150146483A1 DIFFERENTIAL CURRENT SENSING SCHEME FOR MAGNETIC RANDOM ACCESS MEMORY Public/Granted day:2015-05-28
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