Invention Grant
- Patent Title: Memory device having electrically floating body transitor
- Patent Title (中): 具有电浮体转换器的存储器件
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Application No.: US13746523Application Date: 2013-01-22
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Publication No.: US09230651B2Publication Date: 2016-01-05
- Inventor: Yuniarto Widjaja , Jin-Woo Han , Benjamin S. Louie
- Applicant: Yuniarto Widjaja , Jin-Woo Han , Benjamin S. Louie
- Applicant Address: US CA Cupertino
- Assignee: Zeno Semiconductor, INC.
- Current Assignee: Zeno Semiconductor, INC.
- Current Assignee Address: US CA Cupertino
- Agency: Law Office of Alan W. Cannon
- Agent Alan W. Cannon
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/70 ; G11C16/04 ; G11C11/404 ; H01L27/108 ; G11C16/10 ; H01L27/115
Abstract:
A semiconductor memory cell includes a floating body region configured to be charged to a level indicative of a state of the memory cell selected from at least first and second states. A first region of the memory cell is in electrical contact with the floating body region. A second region of the memory cell is spaced apart from the first region and is also in electrical contact with the floating body region. A gate is positioned between the first and second regions. A back-bias region is configured to generate impact ionization when the memory cell is in one of the first and second states, and the back-bias region is configured so as not to generate impact ionization when the memory cell is in the other of the first and second states.
Public/Granted literature
- US20130264656A1 Memory Device Having Electrically Floating Body Transistor Public/Granted day:2013-10-10
Information query
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