Invention Grant
- Patent Title: Nonvolatile memory and data writing method
- Patent Title (中): 非易失性存储器和数据写入方法
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Application No.: US14482495Application Date: 2014-09-10
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Publication No.: US09230664B2Publication Date: 2016-01-05
- Inventor: Tokumasa Hara , Noboru Shibata
- Applicant: Kabushiki Kaisha Toshiba
- Applicant Address: JP Minato-ku
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Main IPC: G11C16/04
- IPC: G11C16/04 ; G11C16/10 ; G11C16/34

Abstract:
According to one embodiment, a nonvolatile memory includes a memory cell array having a plurality of memory cells configured to store 3-bit data corresponding to first to third pages. Data coding, in which first page data values have one boundary, and second and three page data values each have three boundaries, is used to perform a first stage program based on data written into first page d, a second stage program based on data written into the first, second, and third pages, and a third stage program based on data written into the first, second, and third pages.
Public/Granted literature
- US20150357040A1 NONVOLATILE MEMORY AND DATA WRITING METHOD Public/Granted day:2015-12-10
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