Invention Grant
US09230664B2 Nonvolatile memory and data writing method 有权
非易失性存储器和数据写入方法

Nonvolatile memory and data writing method
Abstract:
According to one embodiment, a nonvolatile memory includes a memory cell array having a plurality of memory cells configured to store 3-bit data corresponding to first to third pages. Data coding, in which first page data values have one boundary, and second and three page data values each have three boundaries, is used to perform a first stage program based on data written into first page d, a second stage program based on data written into the first, second, and third pages, and a third stage program based on data written into the first, second, and third pages.
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