Invention Grant
- Patent Title: Memory controller, storage device, and memory control method
- Patent Title (中): 内存控制器,存储设备和内存控制方式
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Application No.: US13953885Application Date: 2013-07-30
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Publication No.: US09230684B2Publication Date: 2016-01-05
- Inventor: Hiroshi Yao , Shinichi Kanno
- Applicant: KABUSHIKI KAISHA TOSHIBA
- Applicant Address: JP Minato-ku
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Main IPC: G11C29/00
- IPC: G11C29/00 ; G11C29/04 ; G11C29/42 ; G06F11/10 ; G06F13/16

Abstract:
According to one embodiment, a memory controller controlling a NAND memory having D bits/cell, includes: a code encoder which generates a code word having correction capability of t symbols; a write control unit which controls writing of the code word to the NAND memory; and a code decoder which decodes the code word read from the NAND memory, wherein the write control unit dispersedly allocates 2×D pages stored in adjacent two word lines in a block of the NAND memory to 2×D/t or more code words.
Public/Granted literature
- US20140169091A1 MEMORY CONTROLLER, STORAGE DEVICE, AND MEMORY CONTROL METHOD Public/Granted day:2014-06-19
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