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US09230793B2 Semiconductor device and method for forming the same 有权
半导体装置及其形成方法

Semiconductor device and method for forming the same
Abstract:
A semiconductor device has a semiconductor substrate including a cell region and a peripheral region and includes: a Silicon-Metal-Silicon (SMS)-structured wafer formed in the cell region, which includes a stacked structure of a first silicon substrate, a metal layer, and a second silicon substrate; and a Silicon On Insulator (SOI)-structured wafer formed in the peripheral region, which includes a stacked structure of the first silicon substrate, a silicon insulation film, and the second silicon substrate.
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