Invention Grant
- Patent Title: Semiconductor device and method for forming the same
- Patent Title (中): 半导体装置及其形成方法
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Application No.: US14197170Application Date: 2014-03-04
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Publication No.: US09230793B2Publication Date: 2016-01-05
- Inventor: Min Chul Sung
- Applicant: SK hynix Inc.
- Applicant Address: KR Icheon
- Assignee: SK HYNIX INC.
- Current Assignee: SK HYNIX INC.
- Current Assignee Address: KR Icheon
- Priority: KR10-2013-0123945 20131017
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L27/108 ; H01L29/78 ; H01L21/02 ; H01L21/18 ; H01L21/74 ; H01L21/762

Abstract:
A semiconductor device has a semiconductor substrate including a cell region and a peripheral region and includes: a Silicon-Metal-Silicon (SMS)-structured wafer formed in the cell region, which includes a stacked structure of a first silicon substrate, a metal layer, and a second silicon substrate; and a Silicon On Insulator (SOI)-structured wafer formed in the peripheral region, which includes a stacked structure of the first silicon substrate, a silicon insulation film, and the second silicon substrate.
Public/Granted literature
- US20150108574A1 SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME Public/Granted day:2015-04-23
Information query
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