Invention Grant
US09230794B2 Process for cleaning, drying and hydrophilizing a semiconductor wafer
有权
用于清洁，干燥和亲水化半导体晶片的方法
- Patent Title: Process for cleaning, drying and hydrophilizing a semiconductor wafer
- Patent Title (中): 用于清洁，干燥和亲水化半导体晶片的方法
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Application No.: US12134378Application Date: 2008-06-06
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Publication No.: US09230794B2Publication Date: 2016-01-05
- Inventor: Guenter Schwab , Clemens Zapilko , Thomas Buschhardt , Diego Feijoo
- Applicant: Guenter Schwab , Clemens Zapilko , Thomas Buschhardt , Diego Feijoo
- Applicant Address: DE Munich
- Assignee: SILTRONIC AG
- Current Assignee: SILTRONIC AG
- Current Assignee Address: DE Munich
- Agency: Brooks Kushman P.C.
- Priority: DE102007027112 20070613
- Main IPC: H01L21/02
- IPC: H01L21/02 ; C30B29/16 ; C30B33/00
Abstract:
Semiconductor wafers are cleaned, dried, and hydrophilized the following steps in the order stated: a) treating the semiconductor wafer with a liquid aqueous solution containing hydrogen fluoride, the semiconductor wafer rotating about its center axis at least occasionally, and b) drying the semiconductor wafer by rotation of the semiconductor wafer about its center axis at a rotational speed of 1000 to 5000 revolutions per minute in an ozone-containing atmosphere, the liquid aqueous solution containing hydrogen fluoride flowing away from the semiconductor wafer on account of the centrifugal force generated by the rotation, and the surface of the semiconductor wafer being hydrophilized by ozone.
Public/Granted literature
- US20080308122A1 Process For Cleaning, Drying and Hydrophilizing A Semiconductor Wafer Public/Granted day:2008-12-18
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