Invention Grant
- Patent Title: Dielectric and/or capacitor formation
- Patent Title (中): 电介质和/或电容器形成
-
Application No.: US13391038Application Date: 2011-05-26
-
Publication No.: US09230797B2Publication Date: 2016-01-05
- Inventor: Chris Rothfuss , Sung-Wei Chen
- Applicant: Chris Rothfuss , Sung-Wei Chen
- Applicant Address: US DE Wilmington
- Assignee: Empire Technology Development LLC
- Current Assignee: Empire Technology Development LLC
- Current Assignee Address: US DE Wilmington
- Agency: Morritt Hock & Hamroff LLP
- Agent Steven S. Rubin, Esq.
- International Application: PCT/US2011/038046 WO 20110526
- International Announcement: WO2012/161714 WO 20121129
- Main IPC: H01G9/07
- IPC: H01G9/07 ; H01G9/15 ; B32B9/04 ; B32B15/04 ; H01L21/02 ; H01G4/33 ; H01G4/12 ; H01L49/02 ; H01G4/30

Abstract:
Technologies are generally described for a component, a method to form a component and/or a system configured to form a component. In an example, the method to form a component may include placing a first layer including a conductive material on a support. The method may include placing a second layer, including the conductive material and oxygen, on the first layer. The method may include placing a third layer, including tellurium and oxygen, on the second layer. The method may include placing a fourth layer, including tin and tellurium, on the third layer. In an example, placing of the fourth layer on the third layer may include placing a fifth layer including tellurium on the fourth layer, placing a sixth layer including tin on the fifth layer, placing a seventh layer including tellurium on the sixth layer and annealing the fifth, sixth, and seventh layers to form the fourth layer.
Public/Granted literature
- US20120301735A1 DIELECTRIC AND/OR CAPACITOR FORMATION Public/Granted day:2012-11-29
Information query