Invention Grant
- Patent Title: Method for preparing a coarse-grain crystallized silicon layer
- Patent Title (中): 粗晶结晶硅层的制备方法
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Application No.: US14391865Application Date: 2013-04-08
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Publication No.: US09230806B2Publication Date: 2016-01-05
- Inventor: Jean-Paul Garandet , Virginie Brize , Etienne Pihan , Alain Straboni , Florent Dupont
- Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES , S'TILE
- Applicant Address: FR Paris FR Buxerolles
- Assignee: Commissariat a l'Energie Atomique et aux Energies Alternatives,S'Tile
- Current Assignee: Commissariat a l'Energie Atomique et aux Energies Alternatives,S'Tile
- Current Assignee Address: FR Paris FR Buxerolles
- Agency: Norton Rose Fulbright US LLP
- Priority: FR1253319 20120411
- International Application: PCT/IB2013/052800 WO 20130408
- International Announcement: WO2013/153504 WO 20131017
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L21/36 ; H01L21/02 ; C30B1/02 ; C30B29/06 ; H01L31/18 ; H01L31/0368
Abstract:
The present invention relates to a method for forming a crystallized silicon layer made up of grains having an average size of no less than 20 μm, including at least the steps that comprise: (1) providing a layer of silicon to be (re)crystallized, the average grain size of which is less than 10 μm; (2) placing said layer of silicon to be (re)crystallized in contact with a liquid composition at least partially made up of a metal solvent; and (3) exposing the assembly to a thermal treatment suitable for (re)crystallizing said layer of silicon with the expected grain size, characterized in that said thermal treatment includes heating the assembly made up of the layer of silicon in contact with said liquid composition to a temperature that is lower than 1410° C. and at least equal to the eutectic temperature in the solvent-silicon phase diagram.
Public/Granted literature
- US20150079772A1 Method for Preparing a Coarse-Grain Crystallized Silicon Layer Public/Granted day:2015-03-19
Information query
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