Invention Grant
- Patent Title: Method of manufacturing semiconductor device
- Patent Title (中): 制造半导体器件的方法
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Application No.: US14574565Application Date: 2014-12-18
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Publication No.: US09230824B2Publication Date: 2016-01-05
- Inventor: Wataru Takayama , Shoichiro Matsuyama , Susumu Nogami , Daisuke Tamura , Kyosuke Hayashi , Jun Kawanobe
- Applicant: TOKYO ELECTRON LIMITED
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Rothwell, Figg, Ernst & Manbeck, P.C.
- Priority: JP2013-262742 20131219
- Main IPC: H01L21/308
- IPC: H01L21/308 ; H01L21/3065 ; H01L21/311 ; H01L21/3213 ; H01J37/32
Abstract:
Provided is a method of manufacturing a semiconductor device. The method includes providing an object to be processed including a multilayer film formed by alternately laminating a first film and a second film having different dielectric coefficients within a processing container of a plasma processing apparatus; and repeatedly performing a sequence including: supplying a first gas including O2 gas or N2 gas, and a rare gas into the processing container and exciting the first gas, supplying a second gas including a fluorocarbon gas or a fluorohydrocarbon gas into the processing container and exciting the second gas, and supplying a third gas including HBr gas, a fluorine-containing gas, and a fluorocarbon gas or a fluorohydrocarbon gas into the processing container and exciting the third gas, so that the multilayer film is etched through a mask.
Public/Granted literature
- US20150179466A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2015-06-25
Information query
IPC分类:
