Invention Grant
- Patent Title: Source and drain dislocation fabrication in FinFETs
- Patent Title (中): FinFET中的源极和漏极位错制造
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Application No.: US14457837Application Date: 2014-08-12
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Publication No.: US09230828B2Publication Date: 2016-01-05
- Inventor: Zhiqiang Wu , Wen-Hsing Hsieh , Hua Feng Chen , Ting-Yun Wu , Carlos H. Diaz , Tzer-Min Shen , Ya-Yun Cheng
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/324 ; H01L27/088 ; H01L21/8234 ; H01L21/265 ; H01L21/762 ; H01L29/32 ; H01L29/66 ; H01L29/78
Abstract:
A device includes a semiconductor fin over a substrate, a gate dielectric on sidewalls of the semiconductor fin, and a gate electrode over the gate dielectric. A source/drain region is on a side of the gate electrode. A dislocation plane is in the source/drain region.
Public/Granted literature
- US20140349458A1 Source and Drain Dislocation Fabrication in FinFETs Public/Granted day:2014-11-27
Information query
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