Invention Grant
- Patent Title: Semiconductor substrate, electronic device and method for manufacturing the same
- Patent Title (中): 半导体衬底，电子器件及其制造方法
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Application No.: US13587322Application Date: 2012-08-16
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Publication No.: US09230860B2Publication Date: 2016-01-05
- Inventor: Shigenobu Sekine , Yurina Sekine
- Applicant: Shigenobu Sekine , Yurina Sekine
- Applicant Address: JP Tokyo
- Assignee: NAPRA CO., LTD.
- Current Assignee: NAPRA CO., LTD.
- Current Assignee Address: JP Tokyo
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Priority: JP2011-210916 20110927; JP2012-028669 20120213
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L23/48 ; H01L21/02 ; H01L21/28
Abstract:
A semiconductor substrate includes a vertical conductor and an insulating layer. The vertical conductor includes a metal/alloy component of a nanocomposite crystal structure and is filled in a vertical hole formed in the semiconductor substrate along its thickness direction. The insulating layer is formed around the vertical conductor in a ring shape and includes nm-sized silica particles and a nanocrystal or nanoamorphous silica filling up a space between the silica particles to provide a nanocomposite structure along with the silica particles.
Public/Granted literature
- US20130075930A1 SEMICONDUCTOR SUBSTRATE, ELETRONIC DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2013-03-28
Information query
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