Method for producing integrated circuit with smaller grains of tungsten

Invention Grant

US09230863B2 Method for producing integrated circuit with smaller grains of tungsten 有权

Title translation: 制造具有较小晶粒的集成电路的方法

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Patent Title: Method for producing integrated circuit with smaller grains of tungsten
Patent Title (中): 制造具有较小晶粒的集成电路的方法
Application No.: US14177854

Application Date: 2014-02-11
Publication No.: US09230863B2

Publication Date: 2016-01-05
Inventor: Jialin Yu , Huang Liu , Jilin Xia , Girish Bohra
Applicant: GLOBALFOUNDRIES, Inc.
Applicant Address: KY Grand Cayman
Assignee: GLOBALFOUNDRIES, INC.
Current Assignee: GLOBALFOUNDRIES, INC.
Current Assignee Address: KY Grand Cayman
Agency: Ingrassia Fisher & Lorenz, P.C.
Main IPC: H01L21/4763
IPC: H01L21/4763 ; H01L21/8234 ; H01L29/66

Method for producing integrated circuit with smaller grains of tungsten

Abstract:

Integrated circuits with tungsten components having a smooth surface and methods for producing such integrated circuits are provided. A method of producing the integrated circuits includes forming a nucleation layer overlying a substrate and within a cavity, where the nucleation layer includes tungsten. A nucleation layer thickness is reduced, and a fill layer if formed overlying the nucleation layer.

Abstract(Chinese):

提供具有光滑表面的钨成分的集成电路以及用于制造这种集成电路的方法。一种制造集成电路的方法包括形成层叠在基底上的成核层，并且其中成核层包含钨。成核层厚度减小，填充层如果形成在成核层上方。

Public/Granted literature

US20150228543A1 INTEGRATED CIRCUITS WITH A TUNGSTEN COMPONENT AND METHODS FOR PRODUCING SUCH INTEGRATED CIRCUITS Public/Granted day:2015-08-13

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46	....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/4763	......非绝缘层的沉积，例如绝缘层上的导电层、电阻层；这些层的后处理（电极的制造入H01L21/28）