Method of forming a semiconductor device having a metal gate

Invention Grant

US09230864B1 Method of forming a semiconductor device having a metal gate 有权

Title translation: 形成具有金属栅极的半导体器件的方法

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Patent Title: Method of forming a semiconductor device having a metal gate
Patent Title (中): 形成具有金属栅极的半导体器件的方法
Application No.: US14515534

Application Date: 2014-10-16
Publication No.: US09230864B1

Publication Date: 2016-01-05
Inventor: Chia-Lin Lu , Chun-Lung Chen , Kun-Yuan Liao , Feng-Yi Chang , Shi-Xiong Lin
Applicant: UNITED MICROELECTRONICS CORP.
Applicant Address: CN Science-Based Industrial Park, Hsin-Chu
Assignee: UNITED MICROELECTRONICS CORP.
Current Assignee: UNITED MICROELECTRONICS CORP.
Current Assignee Address: CN Science-Based Industrial Park, Hsin-Chu
Agent Winston Hsu; Scott Margo
Main IPC: H01L21/8238
IPC: H01L21/8238 ; H01L21/8234 ; H01L21/28 ; H01L29/78

Abstract:

A method of forming a semiconductor device having a metal gate includes the following steps. First of all, a first gate trench is formed in a dielectric layer. Next, a first work function layer is formed, covering the first gate trench. Then, a protection layer is formed in the first gate trench, also on the first work function layer. Then, a patterned sacrificial mask layer is formed in the first gate trench to expose a portion of the protection layer. After that, the exposed protection layer is removed, to form a U-shaped protection layer in the first gate trench. As following, a portion of the first work function layer under the exposed protection layer is removed, to form a U-shaped first work function layer in the first gate trench. Finally, the patterned sacrificial mask layer and the U-shaped protection layer are completely removed.

Abstract(Chinese):

一种形成具有金属栅极的半导体器件的方法包括以下步骤。首先，在电介质层中形成第一栅极沟槽。接下来，形成覆盖第一栅沟槽的第一功函数层。然后，也在第一功函数层上的第一栅极沟槽中形成保护层。然后，在第一栅极沟槽中形成图案化的牺牲掩模层以暴露保护层的一部分。之后，去除暴露的保护层，以在第一栅极沟槽中形成U形保护层。如下，去除暴露的保护层下面的第一功函数层的一部分，以在第一栅极沟槽中形成U形的第一功函数层。最后，图案化的牺牲掩模层和U形保护层被完全去除。

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Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺
H01L21/8238	........互补场效应晶体管，例如CMOS