Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof, and mounting method of semiconductor device
- Patent Title (中): 半导体装置及其制造方法以及半导体装置的安装方法
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Application No.: US14445059Application Date: 2014-07-29
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Publication No.: US09230909B2Publication Date: 2016-01-05
- Inventor: Kazuhito Ichinose , Seiji Muranaka , Kazuyuki Omori
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Tokyo
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Tokyo
- Agency: Miles & Stockbridge P.C.
- Priority: JP2013-160544 20130801
- Main IPC: H01L23/522
- IPC: H01L23/522 ; H01L23/532 ; H01L21/768 ; H01L23/00 ; H01L23/525
Abstract:
Disclosed is a semiconductor device whose reliability can be improved. The semiconductor device includes: first wiring formed over a semiconductor substrate via a first insulating film; a second insulating film that includes an inorganic film covering the first wiring and that has a flat surface on which CMP processing has been performed; a third insulating film that is formed over the second insulating film and includes an inorganic film having moisture resistance higher than that of the second insulating film; and second wiring formed over the third insulating film. The thickness of the second wiring is 10 times or more larger than that of the first wiring, and the second wiring is located over the third insulating film without an organic insulating film being interposed between itself and the third insulating film.
Public/Granted literature
- US20150035156A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF, AND MOUNTING METHOD OF SEMICONDUCTOR DEVICE Public/Granted day:2015-02-05
Information query
IPC分类:
