Invention Grant
- Patent Title: Interconnect crack arrestor structure and methods
- Patent Title (中): 互连防爆器结构和方法
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Application No.: US13370127Application Date: 2012-02-09
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Publication No.: US09230932B2Publication Date: 2016-01-05
- Inventor: Chen-Hua Yu , Da-Yuan Shih
- Applicant: Chen-Hua Yu , Da-Yuan Shih
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L23/544
- IPC: H01L23/544 ; H01L23/48 ; H01L23/00
Abstract:
A system and method for preventing cracks is provided. An embodiment comprises placing crack stoppers into a connection between a semiconductor die and a substrate. The crack stoppers may be in the shape of hollow or solid cylinders and may be placed so as to prevent any cracks from propagating through the crack stoppers.
Public/Granted literature
- US20130207239A1 Interconnect Crack Arrestor Structure and Methods Public/Granted day:2013-08-15
Information query
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