Invention Grant
- Patent Title: Semiconductor device and a manufacturing method thereof
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US13468139Application Date: 2012-05-10
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Publication No.: US09230937B2Publication Date: 2016-01-05
- Inventor: Kaori Sumitomo , Hideyuki Arakawa , Hiroshi Horibe , Yasuki Takata
- Applicant: Kaori Sumitomo , Hideyuki Arakawa , Hiroshi Horibe , Yasuki Takata
- Applicant Address: JP Tokyo
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Tokyo
- Agency: Miles & Stockbridge P.C.
- Priority: JP2011-108530 20110513
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L23/00

Abstract:
There is provided a technology capable of suppressing the damage applied to a pad. When the divergence angle of an inner chamfer part is smaller than 90 degrees, the ultrasonic conversion load in a direction perpendicular to the surface of the pad is very small in magnitude. In other words, the ultrasonic conversion load in a direction perpendicular to the surface of the pad is sufficiently smaller in magnitude than the ultrasonic conversion load in a direction in parallel with the surface of the pad. Consequently, when the divergence angle of the inner chamfer part is smaller than 90 degrees, the ultrasonic conversion load in a direction perpendicular to the surface of the pad can be sufficiently reduced in magnitude, which can prevent pad peeling.
Public/Granted literature
- US20120286427A1 SEMICONDUCTOR DEVICE AND A MANUFACTURING METHOD THEREOF Public/Granted day:2012-11-15
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