Invention Grant
- Patent Title: Semiconductor integrated circuit device
- Patent Title (中): 半导体集成电路器件
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Application No.: US14105281Application Date: 2013-12-13
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Publication No.: US09230946B2Publication Date: 2016-01-05
- Inventor: Yoshihiro Masumura , Hideki Sasaki , Toshiharu Okamoto
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Foley & Lardner LLP
- Priority: JP2012-274261 20121217
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L25/18 ; H01L23/00

Abstract:
The present invention provides a multichip package in which a first semiconductor chip having an RF analog circuit area and a digital circuit area, and a second semiconductor chip having a digital circuit area are plane-arranged over an organic multilayer wiring board and coupled to each other by bonding wires. In the multichip package, the first semiconductor chip is made thinner than the second semiconductor chip.
Public/Granted literature
- US20140167292A1 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE Public/Granted day:2014-06-19
Information query
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