Invention Grant
- Patent Title: Solid-state imaging device, method for manufacturing solid-state imaging device, and imaging apparatus
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Application No.: US14316567Application Date: 2014-06-26
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Publication No.: US09231003B2Publication Date: 2016-01-05
- Inventor: Atsushi Toda
- Applicant: Sony Corporation
- Applicant Address: JP Tokyo
- Assignee: SONY CORPORATION
- Current Assignee: SONY CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Sheridan Ross P.C.
- Priority: JP2009-017470 20090129
- Main IPC: H01L33/50
- IPC: H01L33/50 ; H01L27/146 ; B82Y20/00 ; H01L31/0352
Abstract:
A solid-state imaging device includes a first electrode, a second electrode disposed opposing to the first electrode, and a photoelectric conversion layer, which is disposed between the first electrode and the second electrode and in which narrow gap semiconductor quantum dots are dispersed in a conductive layer, wherein one electrode of the first electrode and the second electrode is formed from a transparent electrode and the other electrode is formed from a metal electrode or a transparent electrode.
Public/Granted literature
- US20140306182A1 SOLID-STATE IMAGING DEVICE, METHOD FOR MANUFACTURING SOLID-STATE IMAGING DEVICE, AND IMAGING APPARATUS Public/Granted day:2014-10-16
Information query
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