Invention Grant
- Patent Title: Back side illumination photodiode of high quantum efficiency
- Patent Title (中): 具有高量子效率的背面照明光电二极管
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Application No.: US14464793Application Date: 2014-08-21
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Publication No.: US09231014B2Publication Date: 2016-01-05
- Inventor: Laurent Frey , Michel Marty
- Applicant: STMicroelectronics SA , Commissariat A L'Energie Atomique et aux Energies Alternatives
- Applicant Address: FR Montrouge FR Paris
- Assignee: STMicroelectronics SA,Commissariat A L'Energie Atomique et aux Energies Alternatives
- Current Assignee: STMicroelectronics SA,Commissariat A L'Energie Atomique et aux Energies Alternatives
- Current Assignee Address: FR Montrouge FR Paris
- Agency: Gardere Wynne Sewell LLP
- Priority: FR1358141 20130823
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L27/14 ; H01L31/062 ; H01L21/00 ; H01L27/146 ; H01L31/0232 ; H01L31/107 ; H01L31/0352
Abstract:
A back side illumination photodiode includes a light-receiving back side surface of a semiconductor material substrate. An area of the light-receiving back side surface includes a recess. The recess is filled with a material having an optical index that is lower than an optical index of the semiconductor material substrate. Both the substrate and the filling material are transparent to an operating wavelength of the photodiode. The recess may be formed to have a ring shape.
Public/Granted literature
- US20150053923A1 BACK SIDE ILLUMINATION PHOTODIODE OF HIGH QUANTUM EFFICIENCY Public/Granted day:2015-02-26
Information query
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