Invention Grant
- Patent Title: Light-emitting device
- Patent Title (中): 发光装置
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Application No.: US14172131Application Date: 2014-02-04
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Publication No.: US09231042B2Publication Date: 2016-01-05
- Inventor: Yusuke Nishido , Yoshiharu Hirakata , Shigetsugu Yamanaka
- Applicant: Yusuke Nishido , Yoshiharu Hirakata , Shigetsugu Yamanaka
- Applicant Address: JP Atsugi-shi, Kanagawa-ken JP Osaka-shi, Osaka
- Assignee: Semiconductor Energy Laboratory Co., Ltd.,Sharp Kabushiki Kaisha
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.,Sharp Kabushiki Kaisha
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken JP Osaka-shi, Osaka
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2013-024342 20130212
- Main IPC: H01L33/36
- IPC: H01L33/36 ; H01L27/32 ; H01L51/52

Abstract:
Occurrence of a crosstalk phenomenon in a light-emitting device is inhibited. A light-emitting device including an insulating layer 416; a first lower electrode 421a formed over the insulating layer; a second lower electrode 421b formed over the insulating layer; a partition 418 formed over the insulating layer and positioned between the first lower electrode and the second lower electrode; a stacked-layer film 423 which is formed over the first lower electrode, the partition, and the second lower electrode and includes a light-emitting layer containing a light-emitting substance and a layer having higher conductivity than that of the light-emitting layer; an upper electrode 422 formed over the stacked-layer film; and a shield electrode 419 which is formed under the partition and does not overlap with the first lower electrode and the second lower electrode.
Public/Granted literature
- US20140225140A1 LIGHT-EMITTING DEVICE Public/Granted day:2014-08-14
Information query
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