Invention Grant
- Patent Title: Semiconductor device and fabrication method therefor, and power supply apparatus
- Patent Title (中): 半导体装置及其制造方法以及电源装置
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Application No.: US14242186Application Date: 2014-04-01
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Publication No.: US09231056B2Publication Date: 2016-01-05
- Inventor: Naoya Okamoto
- Applicant: FUJITSU LIMITED
- Applicant Address: JP Kawasaki
- Assignee: FUJITSU LIMITED
- Current Assignee: FUJITSU LIMITED
- Current Assignee Address: JP Kawasaki
- Agency: Kratz, Quintos & Hanson, LLP
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L29/15 ; H01L29/872 ; H01L29/812 ; H01L29/12 ; H01L29/20 ; H01L21/8252 ; H01L27/06 ; H01L21/28 ; H01L29/49 ; H01L29/78 ; H01L21/02 ; B82Y10/00 ; H01L23/00
Abstract:
A semiconductor device includes a drift layer having a structure wherein a plurality of quantum dot layers each including a quantum dot containing InxGa1-xN (0≦x≦1) and a burying layer burying the quantum dot and containing n-type Inx(GayAl1-y)1-xN (0≦x≦1, 0≦y≦1) are stacked.
Public/Granted literature
- US20140209861A1 SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREFOR, AND POWER SUPPLY APPARATUS Public/Granted day:2014-07-31
Information query
IPC分类:
