Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the device
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US14103155Application Date: 2013-12-11
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Publication No.: US09231059B2Publication Date: 2016-01-05
- Inventor: Noboru Negoro , Hidekazu Umeda , Nanako Hirashita , Tetsuzo Ueda
- Applicant: Panasonic Corporation
- Applicant Address: JP Osaka
- Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Current Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2011-131581 20110613; JP2012-038446 20120224
- Main IPC: H01L31/102
- IPC: H01L31/102 ; H01L29/205 ; H01L29/66 ; H01L29/872 ; H01L29/20 ; H01L21/8258 ; H01L27/06 ; H01L29/04 ; H01L29/47 ; H01L29/778 ; H01L21/02
Abstract:
A semiconductor device includes a substrate; a carrier traveling layer formed on the substrate, made of first group III nitride semiconductor, and containing carriers traveling in a direction along a principal surface of the substrate; a barrier layer formed on the carrier traveling layer and made of second group III nitride semiconductor having a wider band gap than the first group III nitride semiconductor; and an electrode formed on the barrier layer. The device further includes a cap layer formed on the barrier layer at a side of the electrode, and made of third group III nitride semiconductor containing a mixture of single crystals and polycrystals.
Public/Granted literature
- US09190474B2 Semiconductor device and method of manufacturing the device Public/Granted day:2015-11-17
Information query
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