Invention Grant
US09231061B2 Fabrication of surface textures by ion implantation for antireflection of silicon crystals
有权
通过离子注入制造表面纹理,以防止硅晶体的反射
- Patent Title: Fabrication of surface textures by ion implantation for antireflection of silicon crystals
- Patent Title (中): 通过离子注入制造表面纹理,以防止硅晶体的反射
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Application No.: US13279884Application Date: 2011-10-24
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Publication No.: US09231061B2Publication Date: 2016-01-05
- Inventor: Mengbing Huang , Nirag Kadakia , Sebastian Naczas , Hassaram Bakhru
- Applicant: Mengbing Huang , Nirag Kadakia , Sebastian Naczas , Hassaram Bakhru
- Applicant Address: US NY Albany
- Assignee: The Research Foundation of State University of New York
- Current Assignee: The Research Foundation of State University of New York
- Current Assignee Address: US NY Albany
- Agency: Heslin, Rothenberg, Farley & Mesiti, P.C.
- Main IPC: H01L31/18
- IPC: H01L31/18 ; H01L31/0236 ; H01L29/34

Abstract:
The invention relates to a new method of texturing silicon surfaces suited for antireflection based on ion implantation of hydrogen and heavy ions or heavy elements combined with thermal annealing or thermal annealing and oxidation. The addition of the heavy ions or heavy elements allows for a more effective anti-reflective surface than is found when only hydrogen implantation is utilized. The methods used are also time- and cost-effective, as they can utilize already existing semiconductor ion implantation fabrication equipment and reduce the number of necessary steps. The antireflective surfaces are useful for silicon-based solar cells.
Public/Granted literature
- US20120097209A1 FABRICATION OF SURFACE TEXTURES BY ION IMPLANTATION FOR ANTIREFLECTION OF SILICON CRYSTALS Public/Granted day:2012-04-26
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