- Patent Title: Semiconductor device including gate electrode provided over active region in p-type nitride semiconductor layer and method of manufacturing the same, and power supply apparatus
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Application No.: US14645317Application Date: 2015-03-11
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Publication No.: US09231075B2Publication Date: 2016-01-05
- Inventor: Atsushi Yamada
- Applicant: Transphorm Japan, Inc.
- Applicant Address: JP Yokohama
- Assignee: Transphorm Japan, Inc.
- Current Assignee: Transphorm Japan, Inc.
- Current Assignee Address: JP Yokohama
- Agency: Fish & Richardson P.C.
- Priority: JP2011-032042 20110217
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/20 ; H01L29/423 ; H01L29/778 ; H01L21/02 ; H01L21/56 ; H01L29/205
Abstract:
A semiconductor device includes a nitride semiconductor stacked structure including a carrier transit layer and a carrier supply layer; a p-type nitride semiconductor layer provided over the nitride semiconductor stacked structure and including an active region and an inactive region; an n-type nitride semiconductor layer provided on the inactive region in the p-type nitride semiconductor layer; and a gate electrode provided over the active region in the p-type nitride semiconductor layer.
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