Invention Grant
- Patent Title: Asymmetric semiconductor device
- Patent Title (中): 非对称半导体器件
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Application No.: US14013310Application Date: 2013-08-29
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Publication No.: US09231102B2Publication Date: 2016-01-05
- Inventor: Richard Kenneth Oxland , Martin Christopher Holland , Krishna Kumar Bhuwalka
- Applicant: Taiwan Semiconductor Manufacturing Company Limited
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company Limited
- Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
- Current Assignee Address: TW Hsin-Chu
- Agency: Cooper Legal Group, LLC
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L29/78 ; H01L29/66
Abstract:
A semiconductor device includes a first type region including a first conductivity type. The semiconductor device includes a second type region including a second conductivity type. The semiconductor device includes a third type region including a third conductivity type that is opposite the first conductivity type, the third type region covering the first type region. The semiconductor device includes a fourth type region including a fourth conductivity type that is opposite the second conductivity type, the fourth type region covering the second type region. The semiconductor device includes a channel region extending between the third type region and the fourth type region.
Public/Granted literature
- US20150061005A1 ASYMMETRIC SEMICONDUCTOR DEVICE Public/Granted day:2015-03-05
Information query
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