Invention Grant
US09231107B2 Thin film transistor, method for manufacturing the same, and display device comprising the same
有权
薄膜晶体管及其制造方法以及包括该薄膜晶体管的显示装置
- Patent Title: Thin film transistor, method for manufacturing the same, and display device comprising the same
- Patent Title (中): 薄膜晶体管及其制造方法以及包括该薄膜晶体管的显示装置
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Application No.: US14095617Application Date: 2013-12-03
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Publication No.: US09231107B2Publication Date: 2016-01-05
- Inventor: SeYeoul Kwon , MinGu Cho , Sangcheon Youn
- Applicant: LG Display Co., Ltd.
- Applicant Address: KR Seoul
- Assignee: LG Display Co., Ltd.
- Current Assignee: LG Display Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: Fenwick & West LLP
- Priority: KR10-2012-0144970 20121212; KR10-2013-0092414 20130805
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L29/786

Abstract:
A thin film transistor, a method of manufacturing the thin film transistor, and a display device including the thin film transistor are provided. The thin film transistor comprises an oxide semiconductor layer, a gate electrode, a source electrode and a drain electrode formed on a substrate in a coplanar configuration. A first conductive member is in direct contact with the oxide semiconductor layer and in direct contact with the source electrode. A second conductive member is in direct contact with the oxide semiconductor layer and in direct contact with the drain electrode. The first conductive member and the second conductive member are arranged to decrease resistance between a channel region of the oxide semiconductor layer and the source and drain electrodes.
Public/Granted literature
- US20140159037A1 THIN FILM TRANSISTOR, METHOD FOR MANUFACTURING THE SAME, AND DISPLAY DEVICE COMPRISING THE SAME Public/Granted day:2014-06-12
Information query
IPC分类: