Invention Grant
- Patent Title: High voltage circuit layout structure
- Patent Title (中): 高压电路布局结构
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Application No.: US13744273Application Date: 2013-01-17
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Publication No.: US09231121B2Publication Date: 2016-01-05
- Inventor: Joseph Urienza
- Applicant: Monolithic Power Systems, Inc.
- Applicant Address: US CA San Jose
- Assignee: Monolithic Power Systems, Inc.
- Current Assignee: Monolithic Power Systems, Inc.
- Current Assignee Address: US CA San Jose
- Agency: Perkins Coie LLP
- Main IPC: H01L21/761
- IPC: H01L21/761 ; H01L29/872
Abstract:
A high voltage circuit layout structure has a P-type substrate; a first N-type tub, a second N-type tub, a third N-type tub, a first P-type tub with a first width and a second P-type tub with a second width formed on the P-type substrate; wherein the first P-type tub is formed between the first N-type tub and the second N-type tub; and the second P-type tub is formed between the second N-type tub and the third N-type tub.
Public/Granted literature
- US20140197515A1 HIGH VOLTAGE CIRCUIT LAYOUT STRUCTURE Public/Granted day:2014-07-17
Information query
IPC分类:
