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US09231130B2 Photoelectric conversion element and solar cell 有权
光电转换元件和太阳能电池

Photoelectric conversion element and solar cell
Abstract:
Provided is a photoelectric conversion element that has an nip structure formed of amorphous silicon and that is improved in energy conversion efficiency by a structure in which an n+-type a-Si layer is in contact with a transparent electrode formed by an n+-type ZnO layer. This makes it possible to realize photoelectric conversion elements and a solar cell module or facility with large area and high power with an influence on the global resources minimized.
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