Invention Grant
US09231147B2 Heterojunction subcells in inverted metamorphic multijunction solar cells
有权
反相变质多结太阳能电池中的异质结亚电池
- Patent Title: Heterojunction subcells in inverted metamorphic multijunction solar cells
- Patent Title (中): 反相变质多结太阳能电池中的异质结亚电池
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Application No.: US14473703Application Date: 2014-08-29
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Publication No.: US09231147B2Publication Date: 2016-01-05
- Inventor: Mark A. Stan , Arthur Cornfeld
- Applicant: SolAero Technologies Corp.
- Applicant Address: US MN Albuquerque
- Assignee: SolAero Technologies Corp.
- Current Assignee: SolAero Technologies Corp.
- Current Assignee Address: US MN Albuquerque
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L31/18 ; H01L31/0687 ; H01L31/0693 ; H01L31/076 ; H01L31/078 ; H01L31/0725
Abstract:
Inverted metamorphic multijunction solar cells having a heterojunction middle subcell and a graded interlayer, and methods of making same, are disclosed herein. The present disclosure provides a method of manufacturing a solar cell using an MOCVD process, wherein the graded interlayer is composed of (InxGa1-x)y Al1-yAs, and is formed in the MOCVD reactor so that it is compositionally graded to lattice match the middle second subcell on one side and the lower third subcell on the other side, with the values for x and y computed and the composition of the graded interlayer determined so that as the layer is grown in the MOCVD reactor, the band gap of the graded interlayer remains constant at 1.5 eV throughout the thickness of the graded interlayer.
Public/Granted literature
- US20140370648A1 HETEROJUNCTION SUBCELLS IN INVERTED METAMORPHIC MULTIJUNCTION SOLAR CELLS Public/Granted day:2014-12-18
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