Invention Grant
- Patent Title: Method for cleaning and passivating chalcogenide layers
- Patent Title (中): 清洗和钝化硫族化物层的方法
-
Application No.: US14500871Application Date: 2014-09-29
-
Publication No.: US09231148B2Publication Date: 2016-01-05
- Inventor: Marie Buffiere , Marc Meuris , Guy Brammertz
- Applicant: IMEC , Katholieke Universiteit Leuven, KU LEUVEN R&D , Universiteit Hasselt
- Applicant Address: BE Leuven BE Leuven BE Hasselt
- Assignee: IMEC,Katholieke Universiteit Leuven, KU Leuven R&D,Universiteit Hasselt
- Current Assignee: IMEC,Katholieke Universiteit Leuven, KU Leuven R&D,Universiteit Hasselt
- Current Assignee Address: BE Leuven BE Leuven BE Hasselt
- Agency: Knobbe Martens Olson & Bear, LLP
- Priority: EP13191997 20131107
- Main IPC: H01L31/18
- IPC: H01L31/18 ; H01L31/0749 ; H01L31/032 ; H01L31/072 ; H01L21/02

Abstract:
A method for chemically cleaning and passivating a chalcogenide layer is provided, wherein the method comprises bringing the chalcogenide layer into contact with an ammonium sulfide containing ambient, such as an ammonium sulfide liquid solution or an ammonium sulfide containing vapor. Further, a method for fabricating photovoltaic cells with a chalcogenide absorber layer is provided, wherein the method comprises: providing a chalcogenide semiconductor layer on a substrate; bringing the chalcogenide semiconductor layer into contact with an ammonium sulfide containing ambient, thereby removing impurities and passivating the chalcogenide semiconductor layer; and afterwards providing a buffer layer on the chalcogenide semiconductor layer.
Public/Granted literature
- US20150125987A1 METHOD FOR CLEANING AND PASSIVATING CHALCOGENIDE LAYERS Public/Granted day:2015-05-07
Information query
IPC分类: