Invention Grant
- Patent Title: Light emitting diode
- Patent Title (中): 发光二极管
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Application No.: US13845511Application Date: 2013-03-18
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Publication No.: US09231152B2Publication Date: 2016-01-05
- Inventor: Trung-Tri Doan , Chao-Chen Cheng , Yi-Feng Shih
- Applicant: SemiLEDS Optoelectronics Co., Ltd.
- Applicant Address: TW Chu-Nan
- Assignee: SemiLEDS Optoelectronics Co., Ltd.
- Current Assignee: SemiLEDS Optoelectronics Co., Ltd.
- Current Assignee Address: TW Chu-Nan
- Agent Stephen A. Gratton
- Priority: CN201210335502 20120911
- Main IPC: H01L33/04
- IPC: H01L33/04 ; H01L25/075 ; H01L33/62

Abstract:
The present invention provides a light emitting diode, which comprises a first LED die, a second LED die, and a dummy LED die, wherein the second LED die is disposed between the first LED die and the dummy LED die, and each die comprises a first semi-conductive layer, a second semi-conductive layer, and a multiple quantum well layer disposed between the first and the second semi-conductive layers. The first semi-conductive layer of the first LED die is coupled to the second semi-conductive layer of the second LED die, and the first semi-conductive layer of the second LED die is coupled to the first and second semi-conductive layers of the dummy LED die.
Public/Granted literature
- US20140070164A1 LIGHT EMITTING DIODE Public/Granted day:2014-03-13
Information query
IPC分类: