Invention Grant
US09231155B2 Composite substrates, a method of producing the same, a method of producing functional layers made of nitrides of group 13 elements, and functional devices
有权
复合基板，其制造方法，由13族元素的氮化物制成的功能层的制造方法以及功能元件
- Patent Title: Composite substrates, a method of producing the same, a method of producing functional layers made of nitrides of group 13 elements, and functional devices
- Patent Title (中): 复合基板，其制造方法，由13族元素的氮化物制成的功能层的制造方法以及功能元件
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Application No.: US14140234Application Date: 2013-12-24
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Publication No.: US09231155B2Publication Date: 2016-01-05
- Inventor: Yoshitaka Kuraoka , Makoto Iwai
- Applicant: NGK INSULATORS, LTD.
- Applicant Address: JP Aichi-prefecture
- Assignee: NGK INSULATORS, LTD.
- Current Assignee: NGK INSULATORS, LTD.
- Current Assignee Address: JP Aichi-prefecture
- Agency: Cermak Nakajima & McGowan LLP
- Agent Tomoko Nakajima
- Priority: JP2012-190532 20120830
- Main IPC: H01L33/32
- IPC: H01L33/32 ; C30B19/12 ; H01L33/00 ; H01L33/02 ; H01L33/22 ; H01L21/02 ; C30B19/02 ; C30B29/40 ; C30B33/06
Abstract:
A composite substrate 10 includes a sapphire body 1A, a seed crystal film 4 composed of gallium nitride crystal and provided on a surface of the sapphire body, and a gallium nitride crystal layer 7 grown on the seed crystal film 4 and having a thickness of 200 μm or smaller. Voids 5 are provided along an interface between the sapphire body 1A and the seed crystal film 4 in a void ratio of 4.5 to 12.5 percent.
Public/Granted literature
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