Invention Grant
- Patent Title: Insulation structure for high temperature conditions and manufacturing method thereof
- Patent Title (中): 高温条件的绝缘结构及其制造方法
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Application No.: US14555186Application Date: 2014-11-26
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Publication No.: US09231167B2Publication Date: 2016-01-05
- Inventor: Young Ki Lee , Seog Moon Choi , Sang Hyun Shin
- Applicant: Young Ki Lee , Seog Moon Choi , Sang Hyun Shin
- Applicant Address: KR Suwon-Si, Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-Si, Gyeonggi-Do
- Agency: McDermott Will & Emery LLP
- Priority: KR10-2006-0025454 20060320
- Main IPC: H01L29/207
- IPC: H01L29/207 ; H01L33/48 ; H05K3/28 ; H01L33/62 ; H01L33/60
Abstract:
An insulation structure for high temperature conditions and a manufacturing method thereof. In the insulation structure, a substrate has a conductive pattern formed on at least one surface thereof for electrical connection of a device. A metal oxide layer pattern is formed on a predetermined portion of the conductive pattern by anodization, the metal oxide layer pattern made of one selected from a group consisting of Al, Ti and Mg.
Public/Granted literature
- US20150084089A1 INSULATION STRUCTURE FOR HIGH TEMPERATURE CONDITIONS AND MANUFACTURING METHOD THEREOF Public/Granted day:2015-03-26
Information query
IPC分类:
