Invention Grant
- Patent Title: Magnetic tunnel junction device and method of making same
- Patent Title (中): 磁隧道结装置及其制造方法
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Application No.: US13901412Application Date: 2013-05-23
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Publication No.: US09231191B2Publication Date: 2016-01-05
- Inventor: Sheng-Huang Huang , Kuei-Hung Shen , Yung-Hung Wang
- Applicant: Industrial Technology Research Institute
- Applicant Address: TW Hsinchu
- Assignee: Industrial Technology Research Institute
- Current Assignee: Industrial Technology Research Institute
- Current Assignee Address: TW Hsinchu
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner LLP
- Main IPC: G11C11/15
- IPC: G11C11/15 ; G01R33/09 ; H01L43/02 ; H01L43/12 ; H01L43/08 ; G11B5/39
Abstract:
A magnetic tunnel junction (MTJ) device includes a reference layer having a surface, a tunnel insulating layer formed over the surface of the reference layer, a free layer formed over the tunnel insulating layer, and a magnetic field providing layer formed over the free layer. A magnetization direction in each of the reference layer and the free layer is substantially perpendicular to the surface. The magnetic field providing layer is configured to provide a lateral magnetic field in the free layer, the lateral magnetic field being substantially parallel to the surface.
Public/Granted literature
- US20140048896A1 Magnetic Tunnel Junction Device And Method Of Making Same Public/Granted day:2014-02-20
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