According to one embodiment, a magnetoresistive element is disclosed. The element includes a lower electrode, a stacked body provided on the lower electrode and including a first magnetic layer, a tunnel barrier layer and a second magnetic layer. The first magnetic layer is under the tunnel barrier layer, the second magnetic layer is on the tunnel barrier layer. The first magnetic layer includes a first region and a second region outside the first region to surround the first region. The second region includes an element in the first region and other element being different from the element.