Invention Grant
- Patent Title: Flat and high-density cathodes for use in electrochemical cells
- Patent Title (中): 用于电化学电池的扁平和高密度阴极
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Application No.: US13556242Application Date: 2012-07-24
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Publication No.: US09231256B2Publication Date: 2016-01-05
- Inventor: Ashish Shah , Robert Rubino , Hong Gan
- Applicant: Ashish Shah , Robert Rubino , Hong Gan
- Applicant Address: US NY Clarence
- Assignee: Greatbatch Ltd.
- Current Assignee: Greatbatch Ltd.
- Current Assignee Address: US NY Clarence
- Agent Michael F. Scalise
- Main IPC: H01M6/16
- IPC: H01M6/16 ; H01M4/04 ; H01M4/08 ; H01M4/131 ; H01M4/133 ; H01M4/1391 ; H01M4/1393 ; H01M4/485 ; H01M4/583 ; H01M10/052 ; H01M10/058 ; H01M4/66

Abstract:
The traditional method of pressing CFx, screen and SVO sheet assembly results in an electrode that is cupped and not flat. This results in the reduction of the effective volumetric energy density of the electrode or the addition of a process step of flattening of the cathode if at all possible. The new method of assembly effectively eliminates the cupping behavior and produces a flat electrode. In addition, the physical density of the cathode is also increased.
Public/Granted literature
- US20120288760A1 Flat and High-Density Cathodes for Use in Electrochemical Cells Public/Granted day:2012-11-15
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