ESD protection circuit with plural avalanche diodes

Invention Grant

US09231403B2 ESD protection circuit with plural avalanche diodes 有权

Title translation: 具有多个雪崩二极管的ESD保护电路

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Patent Title: ESD protection circuit with plural avalanche diodes
Patent Title (中): 具有多个雪崩二极管的ESD保护电路
Application No.: US14222850

Application Date: 2014-03-24
Publication No.: US09231403B2

Publication Date: 2016-01-05
Inventor: Henry L. Edwards , Akram A. Salman , Lili Yu
Applicant: Texas Instruments Incorporated
Applicant Address: US TX Dallas
Assignee: TEXAS INSTRUMENTS INCORPORATED
Current Assignee: TEXAS INSTRUMENTS INCORPORATED
Current Assignee Address: US TX Dallas
Agent Tuenlap D. Chan; Frank D. Cimino
Main IPC: H01L21/8222
IPC: H01L21/8222 ; H02H9/04

ESD protection circuit with plural avalanche diodes

Abstract:

An electrostatic discharge (ESD) protection circuit (FIG. 3C) is disclosed. The circuit includes a bipolar transistor (304) having a base, collector, and emitter. Each of a plurality of diodes (308-316) has a first terminal coupled to the base and a second terminal coupled to the collector. The collector is connected to a first terminal (V+). The emitter is connected to a first power supply terminal (V−).

Abstract(Chinese):

公开了静电放电（ESD）保护电路（图3C）。该电路包括具有基极，集电极和发射极的双极晶体管（304）。多个二极管（308-316）中的每一个具有耦合到基极的第一端子和耦合到集电极的第二端子。集电极连接到第一端子（V +）。发射极连接到第一电源端子（V-）。

Public/Granted literature

US20150270708A1 ESD PROTECTION CIRCUIT WITH PLURAL AVALANCHE DIODES Public/Granted day:2015-09-24

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8222	......双极工艺