Invention Grant
- Patent Title: High frequency power amplifier
- Patent Title (中): 高频功率放大器
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Application No.: US13845736Application Date: 2013-03-18
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Publication No.: US09231558B2Publication Date: 2016-01-05
- Inventor: Tomoyuki Asada
- Applicant: Tomoyuki Asada
- Applicant Address: JP Tokyo
- Assignee: MITSUBISHI ELECTRIC CORPORATION
- Current Assignee: MITSUBISHI ELECTRIC CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Leydig, Voit & Mayer, Ltd.
- Priority: JP2012-174988 20120807
- Main IPC: H03H7/46
- IPC: H03H7/46 ; H03H11/02 ; H03F3/189

Abstract:
A high frequency power amplifier includes an amplification element amplifying a high frequency signal; a duplexer to which an output signal of the amplification element is inputted, the duplexer allowing a signal of a certain frequency band to pass and attenuating signals of other frequency bands; a matching circuit connected between the amplification element and the duplexer; an external terminal connected to the matching circuit; and a passive element connected between the external terminal and a grounding point. The amplification element, the matching circuit, and the duplexer are integrally mounted on a single substrate. The passive element is located outside the substrate.
Public/Granted literature
- US20140043111A1 HIGH FREQUENCY POWER AMPLIFIER Public/Granted day:2014-02-13
Information query
IPC分类: