Invention Grant
- Patent Title: Fast voltage level shifter circuit
- Patent Title (中): 快速电压电平转换电路
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Application No.: US14279830Application Date: 2014-05-16
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Publication No.: US09231570B2Publication Date: 2016-01-05
- Inventor: Meir Gazit
- Applicant: Solaredge Technologies, Ltd.
- Applicant Address: IL Hod Hasharon
- Assignee: Solaredge Technologies Ltd.
- Current Assignee: Solaredge Technologies Ltd.
- Current Assignee Address: IL Hod Hasharon
- Agency: Banner & Witcoff, Ltd.
- Main IPC: H03K5/08
- IPC: H03K5/08 ; H03K3/356 ; H03K19/0185

Abstract:
A voltage level shifting circuit with an input terminal and an output terminal. The level shifting circuit has a field-effect transistor (FET) switch with a gate attached to the input terminal, a drain attached to the output terminal and a source attached to a current changing mechanism. The current changing mechanism includes a current mirror circuit having an output connected between the source and an electrical earth. The output of the current mirror circuit is preferably adapted to change a current flowing between the drain and the source based on an input voltage applied to the gate.
Public/Granted literature
- US20140247082A1 Fast Voltage Level Shifter Circuit Public/Granted day:2014-09-04
Information query
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