Invention Grant
- Patent Title: Semicondutor apparatus for controlling back bias
- Patent Title (中): 用于控制背偏的半导体器件
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Application No.: US14267627Application Date: 2014-05-01
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Publication No.: US09231580B2Publication Date: 2016-01-05
- Inventor: Kie Bong Ku
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: William Park & Associates Ltd.
- Priority: KR10-2013-0166554 20131230
- Main IPC: G05F1/10
- IPC: G05F1/10 ; H03K17/56 ; H03K19/00

Abstract:
A semiconductor apparatus includes a back bias control block, a first back bias switching block and second back bias switching block. The back bias control block is configured to generate a first P channel control signal and a second N channel control signal. The first back bias switching block is configured to provide one of first and second high voltages as a first P channel back bias of a first circuit in response to the first P channel control signal, and to provide one of first and second low voltages as a first N channel back bias of the first circuit in response to the first N channel control signal. The second back bias switching block is configured to provide one of the first and second high voltages as a second P channel back bias of a second circuit in response to the second P channel control signal, and to provide one of the first and second low voltages as a second N channel back bias of the second circuit in response to the second N channel control signal.
Public/Granted literature
- US20150188518A1 SEMICONDUTOR APPARATUS FOR CONTROLLING BACK BIAS Public/Granted day:2015-07-02
Information query
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