Invention Grant
- Patent Title: Acoustic bandgap structures for integration of MEMS resonators
- Patent Title (中): 用于MEMS谐振器集成的声带结构
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Application No.: US14605489Application Date: 2015-01-26
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Publication No.: US09232289B2Publication Date: 2016-01-05
- Inventor: Bichoy Bahr , Radhika Marathe , Wentao Wang , Dana Weinstein
- Applicant: Bichoy Bahr , Radhika Marathe , Wentao Wang , Dana Weinstein
- Applicant Address: US MA Cambridge
- Assignee: Massachusetts Institute of Technology
- Current Assignee: Massachusetts Institute of Technology
- Current Assignee Address: US MA Cambridge
- Agency: Cooley LLP
- Main IPC: H04R1/00
- IPC: H04R1/00 ; H04R31/00

Abstract:
Example acoustic bandgap devices provided that can be fabricated in a semiconductor fabrication tool based on design check rules. An example device includes a substrate lying in an x-y plane and defining an x-direction and a y-direction, an acoustic resonant cavity over the substrate, and a phononic crystal disposed over the acoustic resonant cavity by generating the phononic crystal as a plurality of unit cells disposed in a periodic arrangement. Each unit cell include: (a) at least one higher acoustic impedance structure having a longitudinal axis oriented in the y-direction and a thickness in the x-direction greater than or about equal to a minimal feature thickness of the semiconductor fabrication tool, and (b) at least one lower acoustic impedance material bordering at least a portion of the at least one higher acoustic impedance structure and forming at least a portion of a remainder of the respective unit cell.
Public/Granted literature
- US20150237423A1 ACOUSTIC BANDGAP STRUCTURES FOR INTEGRATION OF MEMS RESONATORS Public/Granted day:2015-08-20
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