Invention Grant
- Patent Title: Wafer grounding using localized plasma source
- Patent Title (中): 晶圆接地采用局部等离子体源
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Application No.: US14527301Application Date: 2014-10-29
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Publication No.: US09232626B2Publication Date: 2016-01-05
- Inventor: Christopher Sears
- Applicant: KLA-Tencor Corporation
- Applicant Address: US CA Milpitas
- Assignee: KLA-Tencor Corporation
- Current Assignee: KLA-Tencor Corporation
- Current Assignee Address: US CA Milpitas
- Agency: Suiter Swantz pc llo
- Main IPC: H01J7/24
- IPC: H01J7/24 ; H05B31/26 ; H05H1/46 ; H01L21/683 ; H05H1/48 ; H01J37/32

Abstract:
An apparatus may include a substrate support portion, a plasma generation chamber, electrodes, and a power source. The substrate support portion supports a substrate including an insulating layer and a substrate bulk. The plasma generation chamber may include chamber wall portions, a gas port, and a plasma application aperture and is configured to contain a gas. The plasma application aperture may be covered by a portion of the substrate. Each electrode may protrude into or extend into an interior portion of the plasma generation chamber. The power source may be coupled to a particular electrode, and the power source may be configured to apply a voltage to the particular electrode. Application of the voltage to the particular electrode generates a plasma within the plasma generation chamber, whereby generation of the plasma results in a conductive path through the insulating layer of the substrate between the plasma and the substrate bulk.
Public/Granted literature
- US20150123542A1 Wafer Grounding Using Localized Plasma Source Public/Granted day:2015-05-07
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