A memory device includes a boot-up control unit configured to control a start of boot-up operation by starting the boot-up operation when an initialization signal is activated, and ignore the initialization signal after a complete signal is activated, a nonvolatile memory unit configured to store repair data, and output the stored repair data during the boot-up operation, a plurality of registers configured to store the repair data outputted from the nonvolatile memory unit, a plurality of memory banks configured to replace a normal cell with a redundant cell, using the repair data stored in the corresponding registers among the plurality of resistors, and a verification unit configured to generate the complete signal to notify that the boot-up operation is completed.