Invention Grant
US09236380B2 Semiconductor-on-insulator (SOI) device and related methods for making same using non-oxidizing thermal treatment
有权
绝缘体上半导体（SOI）器件及其相关方法使用非氧化热处理
- Patent Title: Semiconductor-on-insulator (SOI) device and related methods for making same using non-oxidizing thermal treatment
- Patent Title (中): 绝缘体上半导体（SOI）器件及其相关方法使用非氧化热处理
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Application No.: US14050576Application Date: 2013-10-10
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Publication No.: US09236380B2Publication Date: 2016-01-12
- Inventor: Pierre Morin , Qing Liu , Nicolas Loubet
- Applicant: STMicroelectronics, Inc.
- Applicant Address: US TX Coppell
- Assignee: STMICROELECTRONICS, INC.
- Current Assignee: STMICROELECTRONICS, INC.
- Current Assignee Address: US TX Coppell
- Agency: Allen, Dyer, Doppelt, Milbrath & Gilchrist, P.A.
- Main IPC: H01L21/8238
- IPC: H01L21/8238 ; H01L27/092 ; H01L27/12 ; H01L21/84
Abstract:
A method for making a semiconductor device may include forming, on a first semiconductor layer of a semiconductor-on-insulator (SOI) wafer, a second semiconductor layer comprising a second semiconductor material different than a first semiconductor material of the first semiconductor layer. The method may further include performing a thermal treatment in a non-oxidizing atmosphere to diffuse the second semiconductor material into the first semiconductor layer, and removing the second semiconductor layer.
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