Invention Grant
- Patent Title: Apparatus and method for real time measurement of substrate temperatures for use in semiconductor growth and wafer processing
- Patent Title (中): 用于半导体生长和晶片处理的衬底温度的实时测量的装置和方法
-
Application No.: US12830810Application Date: 2010-07-06
-
Publication No.: US09239265B2Publication Date: 2016-01-19
- Inventor: Charles A. Taylor, II , Darryl Barlett , Douglas Perry , Roy Clarke , Jason Williams
- Applicant: Charles A. Taylor, II , Darryl Barlett , Douglas Perry , Roy Clarke , Jason Williams
- Applicant Address: US MI Dexter
- Assignee: k-Space Associates, Inc.
- Current Assignee: k-Space Associates, Inc.
- Current Assignee Address: US MI Dexter
- Agency: Endurance Law Group, PLC
- Main IPC: G01J3/00
- IPC: G01J3/00 ; G01J3/40 ; G01J3/42 ; G01J5/00 ; G01J5/58 ; C23C16/46 ; C23C16/52 ; G01J3/10 ; G01J5/60 ; G01J3/02 ; G01J5/08
Abstract:
The invention is an optical method and apparatus for measuring the temperature of semiconductor substrates in real-time, during thin film growth and wafer processing. Utilizing the nearly linear dependence of the interband optical absorption edge on temperature, the present method and apparatus result in highly accurate measurement of the absorption edge in diffuse reflectance and transmission geometry, in real time, with sufficient accuracy and sensitivity to enable closed loop temperature control of wafers during film growth and processing. The apparatus operates across a wide range of temperatures covering all of the required range for common semiconductor substrates.
Public/Granted literature
Information query
