Invention Grant
- Patent Title: Embedded resistor
- Patent Title (中): 嵌入式电阻
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Application No.: US13781761Application Date: 2013-03-01
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Publication No.: US09240403B2Publication Date: 2016-01-19
- Inventor: Ching-Wen Hung , Chih-Sen Huang , Po-Chao Tsao
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L27/06
- IPC: H01L27/06 ; H01L27/02 ; H01L27/07 ; H01L29/73 ; H01L49/02
Abstract:
An embedded resistor including a first interdielectric layer, a cap layer, a resistive layer and a cap film is provided. The first interdielectric layer is located on a substrate. The cap layer is located on the first interdielectric layer, wherein the cap layer has a trench. The resistive layer conformally covers the trench, thereby having a U-shaped cross-sectional profile. The cap film is located in the trench and on the resistive layer, or, an embedded thin film resistor including a first interdielectric layer, a cap layer and a bulk resistive layer is provided. The first interdielectric layer is located on a substrate. The cap layer is located on the first interdielectric layer, wherein the cap layer has a trench. The bulk resistive layer is located in the trench.
Public/Granted literature
- US20140246730A1 EMBEDDED RESISTOR Public/Granted day:2014-09-04
Information query
IPC分类:
